AlN AlGaN

Application

Model

Product

Parameter

Acting as a core foundational material for deep-ultraviolet (DUV) LEDs,

power devices, RF devices, and other frontier optoelectronic devices.

AlN Wafer

Dimension: 2inch(φ50.8 mm±0.1 mm)
Substrate: Single/Double-side polished sapphire (Al₂O₃)
Thickness Range: 0.5 μm to 5 μm
Crystal Orientation: C-plane (0001)
Crystal Quality: X-ray diffraction (XRD) full width at half maximum (FWHM) requirements, corresponding to AlN thickness ranges:
Thickness 0.5 - 1 μm: (002) plane FWHM ≤ 120 arcsec; (102) plane FWHM ≤ 950 arcsec.
Thickness 1 - 2 μm: (002) plane FWHM ≤ 120 arcsec; (102) plane FWHM ≤ 600 arcsec.
Thickness 2 - 3 μm: (002) plane FWHM ≤ 150 arcsec; (102) plane FWHM ≤ 500 arcsec.
Thickness 3 - 4 μm: (002) plane FWHM ≤ 180 arcsec; (102) plane FWHM ≤ 400 arcsec.
Thickness 4 - 5 μm: (002) plane FWHM ≤ 180 arcsec; (102) plane FWHM ≤ 320 arcsec.
Edge Chips/Cracks: Less than 2 mm.
Surface Roughness: Ra < 1.5 nm over a 10 × 10 μm area (measured by AFM).
Packaging: Vacuum-sealed in a Class 10,000 cleanroom environment. Packaged in 25-piece cassettes or single-wafer containers.

AlN: Ultra-Smooth Surface

• Low Defect Density

• Vacuum-Sealed

AlGaN Wafer

Dimension: 2 inch (φ50.8 mm ±0.1 mm)
Substrate: Single/Double-side polished sapphire (Al₂O₃)
Thickness Range: 5 nm to 3000 nm
Crystal Orientation: C-plane (0001)
Bandgap Energy: Customizable based on customer requirements (via Al composition tuning)
Crystal Quality:Reference Specification (for 1.5 μm AlGaN with 60% Al):
(002) plane XRD FWHM ≤ 350 arcsec
(102) plane XRD FWHM ≤ 600 arcsec
Note: The specific crystal quality (XRD FWHM values) is precisely tailored according to the actual Al composition and layer thickness.
Edge Chips/Cracks: Less than 2 mm.
Packaging: Vacuum-sealed in a Class 10,000 cleanroom environment. Packaged in 25-piece cassettes or single-wafer containers.

AlGaN: Tunable Bandgap

• Thickness 5 nm–3 µm

• Custom XRD Specs