Core key technologies of epitaxial materials
Innovatively propose high-quality defect and stress control technology for ultraviolet LED epitaxial materials, achieving a reduction in dislocation density of ultraviolet LED materials to 3 × 10 ⁸ cm ⁻ ², reaching the international advanced level
Dislocation density control
The dislocation density has been reduced to 3 × 10 ⁸ cm ⁻ ², reaching the international advanced level
Effective stress release
Innovative Pyramid Nanographic NPSS Substrate Epitaxial Growth and Healing Technology
Nobel laureates recognized
2014 Nobel Prize winner in Physics, Nakamura, highly praised
Innovative high-quality ultraviolet LED epitaxial material defect and stress control technology
Breakthrough improvement in epitaxial material quality achieved through graphical substrate, thickness control, dislocation merging, and stress relief techniques
Graphic substrate surface morphology
The graphical substrate surface observed by atomic force microscopy (AFM) presents a regular arrangement of pyramid shaped or conical structures, uniformly distributed, providing an ideal template for epitaxial growth
Thickness exceeding 10 µ m
Scanning electron microscopy (SEM) cross-sectional images show the growth of AlN layer on sapphire substrate, with a thickness exceeding 10 µ m, including vertically extending air holes
Bending annihilation during dislocation merging process
Transmission electron microscopy (TEM) images show the bending, merging, and annihilation processes of dislocation defects in the epitaxial layer during growth, effectively reducing defect density
Effective stress release
Reverse space mapping (RSM) analysis displays the stress state and crystal quality in the material, achieving high-quality epitaxial growth through effective stress release techniques
Technological achievements and intellectual property rights
Innovative achievements based on epitaxial technology have been recognized by Nobel laureates and successfully applied to satellite exploration engineering
core patents
Representative paper
Application achievements
Evaluation of Nobel laureates
2014 Nobel Prize winner in Physics Nakamura
This technological innovation is expected to make low dislocation density AlN/NPSS a reality through novel growth methods and annealing techniques