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WAlN-SA002
recommend
High quality AlN/Sapphire template based on MOCVD process
Diameter
2 inch
Substrate
Sapphire
Substrate Thickness
430±20 μm
Epilayer Thickness
[1,2) μm
FWHM of 002 XRC
≤ 120 arcsec
FWHM of 102 XRC
≤ 600 arcsec
WAlN-SA003
High quality AlN/Sapphire template based on MOCVD process
Diameter
2 inch
Substrate
Sapphire
Substrate Thickness
430±20 μm
Epilayer Thickness
[2,3) μm
FWHM of 002 XRC
≤ 150 arcsec
FWHM of 102 XRC
≤ 500 arcsec
WAlN-SA004
High quality AlN/Sapphire template based on MOCVD process
Diameter
2 inch
Substrate
Sapphire
Substrate Thickness
430±20 μm
Epilayer Thickness
[3,4) μm
FWHM of 002 XRC
≤ 180 arcsec
FWHM of 102 XRC
≤ 400 arcsec
WAlN-SA001
High quality AlN/Sapphire template based on MOCVD process
Diameter
2 inch
Substrate
Sapphire
Substrate Thickness
430±20 μm
Epilayer Thickness
[0. 1,1) μm
FWHM of 002 XRC
≤ 100 arcsec
FWHM of 102 XRC
≤ 800 arcsec
LP2MQBB
recommend
Optical power
15~30 mW
drive current
80 mA
wavelength
260~280 nm
Light output angle
120°
working voltage
5~7 V
LP2AQHB
recommend
Optical power
40~70 mW
drive current
200 mA
wavelength
260~280 nm
Light output angle
120°
working voltage
5~7 V
LP2AHAC
Optical power
40~70 mW
drive current
200 mA
wavelength
260~280 nm
Light output angle
30°
working voltage
5~7 V
LP2AHAA
Optical power
40~70 mW
drive current
200 mA
wavelength
260~280 nm
Light output angle
60°
working voltage
5~7 V
LM218QQA
Optical power
400~600 mW
drive current
600 mA
wavelength
260~280 nm
Light output angle
60°
working voltage
15~21 V
LM44QPB
Optical power
200~400 mW
drive current
700 mA
wavelength
260~280 nm
Light output angle
120°
working voltage
11~14 V
LM24QPB
Optical power
70~150 mW
drive current
200 mA
wavelength
260~280 nm
Light output angle
120°
working voltage
10~14 V
LM24QMC
Optical power
70~150 mW
drive current
200 mA
wavelength
260~280 nm
Light output angle
30°
working voltage
10~14 V