WAlN-SA001

High quality AlN/Sapphire template based on MOCVD process

thickness
[0.1, 1) μm
(002)
≤ 100 arcsec
(102)
≤ 800 arcsec
WAlN-SA001

Basic parameters

Diameter 2 inch
Substrate Sapphire
Substrate Thickness 430±20 μm
Epilayer Thickness [0.1, 1) μm
FWHM of 002 XRC ≤ 100 arcsec
FWHM of 102 XRC ≤ 800 arcsec
Front side roughness ≤ 1. 5 nm (10×10 μm)
Edge exclusion ≤ 3 mm
Through Crack None
Surface orientation of a-plane 0°±0. 1°
Surface orientation of m-plane 0. 2°±0. 1°
Primary flat orientation a-plane±0. 1°
Primary flat length 16±1 mm
Back side roughness 0. 8±0. 2 μm

structure size

No structural dimension information available at the moment

Latest AlGaN epitaxial wafer products

WAlN-SA002

WAlN-SA002

thickness [1, 2) μm
(002) ≤ 120 arcsec
(102) ≤ 600 arcsec
WAlN-SA003

WAlN-SA003

thickness [2, 3) μm
(002) ≤ 150 arcsec
(102) ≤ 500 arcsec
WAlN-SA004

WAlN-SA004

thickness [3, 4) μm
(002) ≤ 180 arcsec
(102) ≤ 400 arcsec
WAlN-SA001

WAlN-SA001

thickness [0.1, 1) μm
(002) ≤ 100 arcsec
(102) ≤ 800 arcsec
See more