Core key technologies of epitaxial materials
Innovatively proposing high-quality ultraviolet radiation LED Defects in epitaxial materials and stress control technology, Realize UV LED The dislocation density of the material decreases to 3×10⁸ cm⁻², Reaching the international advanced level
Dislocation density control
The dislocation density decreases to 3×10⁸ cm⁻², Reaching the international advanced level
Effective stress release
Innovation Pyramid Nanographization NPSS Substrate epitaxial growth healing technology
Nobel laureates recognized
2014 Nobel Prize winner in Physics Nakamura highly praise
Innovative High Quality UV LED Defects in epitaxial materials and stress control technology
By visualizing the substrate, thickness control, Dislocation merging and stress release technology, Achieve breakthrough improvement in the quality of epitaxial materials
Graphic substrate surface morphology
Using atomic force microscope (AFM) Observing the graphical substrate surface, A pyramid or conical structure arranged in a regular pattern, uniform distribution, Provide an ideal template for epitaxial growth.
Thickness exceeds 10µm
scanning electron microscope (SEM) Cross sectional image display AlN Growth of Layer on Sapphire Substrate, Thickness exceeds 10µm, It includes vertically extending air holes.
Bending annihilation during dislocation merging process
transmission electron microscope (TEM) Image displays the bending of dislocation defects in the epitaxial layer during the growth process, Merge and Annihilation Process, Effectively reduce defect density.
Effective stress release
Reciprocal space mapping (RSM) Analyze and display the stress state and crystal quality in the material, Realize high-quality epitaxial growth through effective stress relief technology.
Technological achievements and intellectual property rights
Innovative achievements based on epitaxial technology recognized by Nobel laureates, And successfully applied to satellite detection engineering
core patent
Representative Paper
Application achievements
Evaluation of Nobel laureates
2014 Nobel Prize winner in Physics Nakamura
"This technological innovation is expected to achieve low dislocation density through novel growth methods and annealing techniques AlN/NPSS become a reality"
