产品目录
请选择产品类别
WAlN-SA002
推荐
基于MOCVD工艺的高质量AlN/Sapphire模板
Diameter
2 inch
Substrate
Sapphire
Substrate Thickness
430±20 μm
Epilayer Thickness
[1,2) μm
FWHM of 002 XRC
≤ 120 arcsec
FWHM of 102 XRC
≤ 600 arcsec
WAlN-SA003
基于MOCVD工艺的高质量AlN/Sapphire模板
Diameter
2 inch
Substrate
Sapphire
Substrate Thickness
430±20 μm
Epilayer Thickness
[2,3) μm
FWHM of 002 XRC
≤ 150 arcsec
FWHM of 102 XRC
≤ 500 arcsec
WAlN-SA004
基于MOCVD工艺的高质量AlN/Sapphire模板
Diameter
2 inch
Substrate
Sapphire
Substrate Thickness
430±20 μm
Epilayer Thickness
[3,4) μm
FWHM of 002 XRC
≤ 180 arcsec
FWHM of 102 XRC
≤ 400 arcsec
WAlN-SA001
基于MOCVD工艺的高质量AlN/Sapphire模板
Diameter
2 inch
Substrate
Sapphire
Substrate Thickness
430±20 μm
Epilayer Thickness
[0.1,1) μm
FWHM of 002 XRC
≤ 100 arcsec
FWHM of 102 XRC
≤ 800 arcsec