WAlN-SA003

基于MOCVD工艺的高质量AlN/Sapphire模板

厚度

[2,3) μm

(002)

≤ 150 arcsec

(102)

≤ 500 arcsec

基本参数

Diameter 2 inch

Substrate Sapphire

Substrate Thickness 430±20 μm

Epilayer Thickness [2,3) μm

FWHM of 002 XRC ≤ 150 arcsec

FWHM of 102 XRC ≤ 500 arcsec

Front side roughness ≤ 1.5 nm (10×10 μm)

Edge exclusion ≤ 3 mm

Through Crack None

Surface orientation of a-plane 0°±0.1°

Surface orientation of m-plane 0.2°±0.1°

Primary flat orientation a-plane±0.1°

Primary flat length 16±1 mm

Back side roughness 0.8±0.2 μm

暂无结构尺寸信息