WAlN-SA003

Hochwertige AlN/Sapphire-Vorlagen auf Basis des MOCVD-Prozesses

Dicke

[2, 3) μm

(002)

≤ 150 arcsec

(102)

≤ 500 arcsec

Grundparameter

Diameter 2 inch

Substrate Sapphire

Substrate Thickness 430±20 μm

Epilayer Thickness [2, 3) μm

FWHM of 002 XRC ≤ 150 arcsec

FWHM of 102 XRC ≤ 500 arcsec

Front side roughness ≤ 1. 5 nm (10×10 μm)

Edge exclusion ≤ 3 mm

Through Crack None

Surface orientation of a-plane 0°±0. 1°

Surface orientation of m-plane 0. 2°±0. 1°

Primary flat orientation a-plane±0. 1°

Primary flat length 16±1 mm

Back side roughness 0. 8±0. 2 μm

Keine Informationen zur Strukturgröße